Scanning capacitance microscopy and related technologies for semiconductor device characterizations

Scanning capacitance microscopy and related technologies for semiconductor device characterizations

This work reports on applying scanning capacitance microscopy (SCM), one relatively new technology to silicon device characterization. As an extension of scanning probe microscopy (SPM), scanning capacitance microscopy (SCM) has the unique ability to map high-resolution two-dimensional dopant profil...

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Main Author: Jiang, Yaoyao
Other Authors: Zhu, Weiguang
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:http://hdl.handle.net/10356/4447
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Institution: Nanyang Technological University
id sg-ntu-dr.10356-4447
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spelling sg-ntu-dr.10356-44472023-07-04T15:10:07Z Scanning capacitance microscopy and related technologies for semiconductor device characterizations Jiang, Yaoyao Zhu, Weiguang School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors This work reports on applying scanning capacitance microscopy (SCM), one relatively new technology to silicon device characterization. As an extension of scanning probe microscopy (SPM), scanning capacitance microscopy (SCM) has the unique ability to map high-resolution two-dimensional dopant profile of semiconductor device. Master of Engineering 2008-09-17T09:51:43Z 2008-09-17T09:51:43Z 2004 2004 Thesis http://hdl.handle.net/10356/4447 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Jiang, Yaoyao
Scanning capacitance microscopy and related technologies for semiconductor device characterizations
description This work reports on applying scanning capacitance microscopy (SCM), one relatively new technology to silicon device characterization. As an extension of scanning probe microscopy (SPM), scanning capacitance microscopy (SCM) has the unique ability to map high-resolution two-dimensional dopant profile of semiconductor device.
author2 Zhu, Weiguang
author_facet Zhu, Weiguang
Jiang, Yaoyao
format Theses and Dissertations
author Jiang, Yaoyao
author_sort Jiang, Yaoyao
title Scanning capacitance microscopy and related technologies for semiconductor device characterizations
title_short Scanning capacitance microscopy and related technologies for semiconductor device characterizations
title_full Scanning capacitance microscopy and related technologies for semiconductor device characterizations
title_fullStr Scanning capacitance microscopy and related technologies for semiconductor device characterizations
title_full_unstemmed Scanning capacitance microscopy and related technologies for semiconductor device characterizations
title_sort scanning capacitance microscopy and related technologies for semiconductor device characterizations
publishDate 2008
url http://hdl.handle.net/10356/4447
_version_ 1772826102402646016

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