Compact modeling of non-classical MOSFETs for circuit simulation

• المؤلف الرئيسي: Zhu, Guojun.
• مؤلفون آخرون: Zhou Xing
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2011
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/44550

This thesis documents the compact models developed for SOI/FinFET/SiNW MOSFETs as well as Schottky barrier and dopant-segregated Schottky MOSFETs. The Unified Regional Modeling approach is extended from bulk MOSFETs to SOI MOSFETs as well as the next generation FinFET/SiNW MOSFETs. SOI-spec...