Study on morphology of copper-through silicon vias based on electron backscatter diffraction
In this project, the effect of annealing conditions: without annealing, annealing at 250oC and annealing at 400oC is studied with the use of Electron Backscatter Diffraction (EBSD) on Copper-Through Silicon Via (Cu-TSV). As EBSD is a surface characterisation, the sample preparation is important in o...
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| Format: | Final Year Project |
| Language: | English |
| Published: |
2011
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| Online Access: | http://hdl.handle.net/10356/44765 |
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| Institution: | Nanyang Technological University |
| Language: | English |