Study on morphology of copper-through silicon vias based on electron backscatter diffraction

• Main Author: Zhuo, Guoping.
• Other Authors: Gan Chee Lip
• Format: Final Year Project
• Language: English
• Published: 2011
• Subjects: DRNTU::Engineering::Materials::Electronic packaging materials
• Online Access: http://hdl.handle.net/10356/44765
• Institution: Nanyang Technological University

In this project, the effect of annealing conditions: without annealing, annealing at 250oC and annealing at 400oC is studied with the use of Electron Backscatter Diffraction (EBSD) on Copper-Through Silicon Via (Cu-TSV). As EBSD is a surface characterisation, the sample preparation is important in o...