Study and characterization of low dielectric constant materials for interlayer dielectric applications

Study and characterization of low dielectric constant materials for interlayer dielectric applications

The properties of low-k SiCOH film deposited by plasma-enhanced chemical vapor deposition using trimethylsilane are reported here. The deposition process was performed at different temperatures form 200 to 400C. the influence of deposition temperature on the films were characterized using Fourier tr...

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Main Author: Narayanan, Babu
Other Authors: Prasad, Krishnamachar
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Online Access:http://hdl.handle.net/10356/4535
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-45352023-07-04T15:22:14Z Study and characterization of low dielectric constant materials for interlayer dielectric applications Narayanan, Babu Prasad, Krishnamachar School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials The properties of low-k SiCOH film deposited by plasma-enhanced chemical vapor deposition using trimethylsilane are reported here. The deposition process was performed at different temperatures form 200 to 400C. the influence of deposition temperature on the films were characterized using Fourier transform infrared spectroscopy (FTIR) to understand its impact on the studied properties. Master of Science (Microelectronics) 2008-09-17T09:53:43Z 2008-09-17T09:53:43Z 2003 2003 Thesis http://hdl.handle.net/10356/4535 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Narayanan, Babu
Study and characterization of low dielectric constant materials for interlayer dielectric applications
description The properties of low-k SiCOH film deposited by plasma-enhanced chemical vapor deposition using trimethylsilane are reported here. The deposition process was performed at different temperatures form 200 to 400C. the influence of deposition temperature on the films were characterized using Fourier transform infrared spectroscopy (FTIR) to understand its impact on the studied properties.
author2 Prasad, Krishnamachar
author_facet Prasad, Krishnamachar
Narayanan, Babu
format Theses and Dissertations
author Narayanan, Babu
author_sort Narayanan, Babu
title Study and characterization of low dielectric constant materials for interlayer dielectric applications
title_short Study and characterization of low dielectric constant materials for interlayer dielectric applications
title_full Study and characterization of low dielectric constant materials for interlayer dielectric applications
title_fullStr Study and characterization of low dielectric constant materials for interlayer dielectric applications
title_full_unstemmed Study and characterization of low dielectric constant materials for interlayer dielectric applications
title_sort study and characterization of low dielectric constant materials for interlayer dielectric applications
publishDate 2008
url http://hdl.handle.net/10356/4535
_version_ 1772828479549603840

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