Thermal modeling and characterization for power devices (IGBT)

• المؤلف الرئيسي: Sulaiman Mohamed.
• مؤلفون آخرون: Tseng King Jet
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2011
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Power electronics
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/45467
• المؤسسة: Nanyang Technological University

Temperature junction constraints in power semiconductor devices are one of the factors that can determine whether it would change in its operation or go into failure. It is thus essential to create models and characterization techniques to determine this effect of junction temperature on the power s...