Thermal modeling and characterization for power devices (IGBT)

• Main Author: Sulaiman Mohamed.
• Other Authors: Tseng King Jet
• Format: Final Year Project
• Language: English
• Published: 2011
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Power electronics
• Online Access: http://hdl.handle.net/10356/45467
• Institution: Nanyang Technological University

Temperature junction constraints in power semiconductor devices are one of the factors that can determine whether it would change in its operation or go into failure. It is thus essential to create models and characterization techniques to determine this effect of junction temperature on the power s...