Thermal modeling and characterization for power devices (IGBT)
Temperature junction constraints in power semiconductor devices are one of the factors that can determine whether it would change in its operation or go into failure. It is thus essential to create models and characterization techniques to determine this effect of junction temperature on the power s...
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| 格式: | Final Year Project |
| 語言: | English |
| 出版: |
2011
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| 主題: | |
| 在線閱讀: | http://hdl.handle.net/10356/45467 |
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| 機構: | Nanyang Technological University |
| 語言: | English |