Characterization and reliability study of non-volatile memory devices

Characterization and reliability study of non-volatile memory devices

Flash memory devices are very important and are widely used in our daily life. With the continuous scaling of memory devices dimension, it is expected that the memory will not fulfill the requirement set by the International Technology Roadmap of Semiconductor (ITRS).

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Bibliographic Details
Main Author: Tang, Zen Hwai.
Other Authors: Chen Tupei
Format: Final Year Project
Language:English
Published: 2011
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::integrated circuits
Online Access:http://hdl.handle.net/10356/45581
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Institution: Nanyang Technological University
Language: English
Description
Summary:Flash memory devices are very important and are widely used in our daily life. With the continuous scaling of memory devices dimension, it is expected that the memory will not fulfill the requirement set by the International Technology Roadmap of Semiconductor (ITRS).

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