Characterization and reliability study of non-volatile memory devices

• Main Author: Tang, Zen Hwai.
• Other Authors: Chen Tupei
• Format: Final Year Project
• Language: English
• Published: 2011
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::integrated circuits
• Online Access: http://hdl.handle.net/10356/45581
• Institution: Nanyang Technological University

Flash memory devices are very important and are widely used in our daily life. With the continuous scaling of memory devices dimension, it is expected that the memory will not fulfill the requirement set by the International Technology Roadmap of Semiconductor (ITRS).