Characterization and reliability study of non-volatile memory devices

Flash memory devices are very important and are widely used in our daily life. With the continuous scaling of memory devices dimension, it is expected that the memory will not fulfill the requirement set by the International Technology Roadmap of Semiconductor (ITRS).

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Bibliographic Details
Main Author:	Tang, Zen Hwai.
Other Authors:	Chen Tupei
Format:	Final Year Project
Language:	English
Published:	2011
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::integrated circuits
Online Access:	http://hdl.handle.net/10356/45581
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-45581
record_format	dspace
spelling	sg-ntu-dr.10356-455812023-07-07T15:48:26Z Characterization and reliability study of non-volatile memory devices Tang, Zen Hwai. Chen Tupei School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::integrated circuits Flash memory devices are very important and are widely used in our daily life. With the continuous scaling of memory devices dimension, it is expected that the memory will not fulfill the requirement set by the International Technology Roadmap of Semiconductor (ITRS). Bachelor of Engineering 2011-06-15T04:40:15Z 2011-06-15T04:40:15Z 2011 2011 Final Year Project (FYP) http://hdl.handle.net/10356/45581 en Nanyang Technological University 64 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering::integrated circuits
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::integrated circuits Tang, Zen Hwai. Characterization and reliability study of non-volatile memory devices
description	Flash memory devices are very important and are widely used in our daily life. With the continuous scaling of memory devices dimension, it is expected that the memory will not fulfill the requirement set by the International Technology Roadmap of Semiconductor (ITRS).
author2	Chen Tupei
author_facet	Chen Tupei Tang, Zen Hwai.
format	Final Year Project
author	Tang, Zen Hwai.
author_sort	Tang, Zen Hwai.
title	Characterization and reliability study of non-volatile memory devices
title_short	Characterization and reliability study of non-volatile memory devices
title_full	Characterization and reliability study of non-volatile memory devices
title_fullStr	Characterization and reliability study of non-volatile memory devices
title_full_unstemmed	Characterization and reliability study of non-volatile memory devices
title_sort	characterization and reliability study of non-volatile memory devices
publishDate	2011
url	http://hdl.handle.net/10356/45581
_version_	1772825172902936576

Characterization and reliability study of non-volatile memory devices

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