Simulation and optimisation of a tunneling field effect transistor

• المؤلف الرئيسي: Neo, Samuel Choon Wee
• مؤلفون آخرون: Zhou Xing
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2011
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/46199
• المؤسسة: Nanyang Technological University

This report details the operating principles and physics governing a vertical silicon nanowire (SiNW) based tunneling field effect transistor (TFET). It also explores areas in which the TFET performances could be improved and optimized. Although a SiNW based TFET has its improvements over MOSFET...