Simulation and optimisation of a tunneling field effect transistor

• Main Author: Neo, Samuel Choon Wee
• Other Authors: Zhou Xing
• Format: Final Year Project
• Language: English
• Published: 2011
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/46199
• Institution: Nanyang Technological University

This report details the operating principles and physics governing a vertical silicon nanowire (SiNW) based tunneling field effect transistor (TFET). It also explores areas in which the TFET performances could be improved and optimized. Although a SiNW based TFET has its improvements over MOSFET...