Simulation and optimisation of a tunneling field effect transistor
This report details the operating principles and physics governing a vertical silicon nanowire (SiNW) based tunneling field effect transistor (TFET). It also explores areas in which the TFET performances could be improved and optimized. Although a SiNW based TFET has its improvements over MOSFET...
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格式: | Final Year Project |
語言: | English |
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2011
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在線閱讀: | http://hdl.handle.net/10356/46199 |
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