Simulation and optimisation of a tunneling field effect transistor

This report details the operating principles and physics governing a vertical silicon nanowire (SiNW) based tunneling field effect transistor (TFET). It also explores areas in which the TFET performances could be improved and optimized. Although a SiNW based TFET has its improvements over MOSFET...

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書目詳細資料
主要作者: Neo, Samuel Choon Wee
其他作者: Zhou Xing
格式: Final Year Project
語言:English
出版: 2011
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在線閱讀:http://hdl.handle.net/10356/46199
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