Fabrication and charaterization of InP-based high election mobility transistors

143 p.

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Main Author: Liu, Yuwei
Other Authors: Wang Hong
Format: Theses and Dissertations
Published: 2011
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Online Access:https://hdl.handle.net/10356/46750
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-467502023-07-04T17:07:11Z Fabrication and charaterization of InP-based high election mobility transistors Liu, Yuwei Wang Hong School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors 143 p. InP-based high electron mobility transistor (HEMT) is an important device in high frequency and low noise applications. In current work, studies on InP-based InGaAs single channel HEMT and InGaAs/InP composite channel HEMT were carried out. Some important issues such as the thermal stability of InGaAs/InP composite channel HEMT, surface passivation effect on InGaAs/InP composite channel HEMT, high-frequency noise of InP HEMT, and suppress of thermal noise in InGaAs/InP composite channel HEMT were investigated. They are summarized as following: DOCTOR OF PHILOSOPHY (EEE) 2011-12-23T07:43:30Z 2011-12-23T07:43:30Z 2009 2009 Thesis Liu, Y. (2009). Fabrication and charaterization of InP-Based high election mobility transistors. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/46750 10.32657/10356/46750 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Liu, Yuwei
Fabrication and charaterization of InP-based high election mobility transistors
description 143 p.
author2 Wang Hong
author_facet Wang Hong
Liu, Yuwei
format Theses and Dissertations
author Liu, Yuwei
author_sort Liu, Yuwei
title Fabrication and charaterization of InP-based high election mobility transistors
title_short Fabrication and charaterization of InP-based high election mobility transistors
title_full Fabrication and charaterization of InP-based high election mobility transistors
title_fullStr Fabrication and charaterization of InP-based high election mobility transistors
title_full_unstemmed Fabrication and charaterization of InP-based high election mobility transistors
title_sort fabrication and charaterization of inp-based high election mobility transistors
publishDate 2011
url https://hdl.handle.net/10356/46750
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