Fabrication and charaterization of InP-based high election mobility transistors
143 p.
Saved in:
Main Author: | |
---|---|
Other Authors: | |
Format: | Theses and Dissertations |
Published: |
2011
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/46750 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
id |
sg-ntu-dr.10356-46750 |
---|---|
record_format |
dspace |
spelling |
sg-ntu-dr.10356-467502023-07-04T17:07:11Z Fabrication and charaterization of InP-based high election mobility transistors Liu, Yuwei Wang Hong School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors 143 p. InP-based high electron mobility transistor (HEMT) is an important device in high frequency and low noise applications. In current work, studies on InP-based InGaAs single channel HEMT and InGaAs/InP composite channel HEMT were carried out. Some important issues such as the thermal stability of InGaAs/InP composite channel HEMT, surface passivation effect on InGaAs/InP composite channel HEMT, high-frequency noise of InP HEMT, and suppress of thermal noise in InGaAs/InP composite channel HEMT were investigated. They are summarized as following: DOCTOR OF PHILOSOPHY (EEE) 2011-12-23T07:43:30Z 2011-12-23T07:43:30Z 2009 2009 Thesis Liu, Y. (2009). Fabrication and charaterization of InP-Based high election mobility transistors. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/46750 10.32657/10356/46750 Nanyang Technological University application/pdf |
institution |
Nanyang Technological University |
building |
NTU Library |
continent |
Asia |
country |
Singapore Singapore |
content_provider |
NTU Library |
collection |
DR-NTU |
topic |
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors |
spellingShingle |
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Liu, Yuwei Fabrication and charaterization of InP-based high election mobility transistors |
description |
143 p. |
author2 |
Wang Hong |
author_facet |
Wang Hong Liu, Yuwei |
format |
Theses and Dissertations |
author |
Liu, Yuwei |
author_sort |
Liu, Yuwei |
title |
Fabrication and charaterization of InP-based high election mobility transistors |
title_short |
Fabrication and charaterization of InP-based high election mobility transistors |
title_full |
Fabrication and charaterization of InP-based high election mobility transistors |
title_fullStr |
Fabrication and charaterization of InP-based high election mobility transistors |
title_full_unstemmed |
Fabrication and charaterization of InP-based high election mobility transistors |
title_sort |
fabrication and charaterization of inp-based high election mobility transistors |
publishDate |
2011 |
url |
https://hdl.handle.net/10356/46750 |
_version_ |
1772828162363752448 |