Fabrication and charaterization of InP-based high election mobility transistors
143 p.
Saved in:
Main Author: | Liu, Yuwei |
---|---|
Other Authors: | Wang Hong |
Format: | Theses and Dissertations |
Published: |
2011
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/46750 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Similar Items
-
Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs)
by: Yang, Hong
Published: (2008) -
Growth and characterization of carbon doped GaAs- and InP- based heterojunction bipolar transistors
by: Zhang, Rong
Published: (2008) -
Fabrication of InGaP high electron mobility transistors by electron beam technique
by: Gay, Boon Ping.
Published: (2008) -
Fabrication and characterization of Algan/Gan high electron mobility transistors on silicon
by: Tham, Wai Hoe
Published: (2016) -
High-speed and high-photocurrent InP-based uni-traveling-carrier photodiode
by: Meng, Qianqian
Published: (2017)