Electrical and optical characterization of GaInP based heterostructures

Electrical and optical characterization of GaInP based heterostructures

This thesis presents the solid source molecular beam epitaxy (SSMBE) growth of Gao.52Ino.48P epitaxial layers, Gao.52Ino.48P/Ino.2Gao.8As/GaAs p-HEMT structures, and Gao 52lno.48P/GaAs single quantum well (SQW) on GaAs (100) substrate using the valved phosphorus cracker cell and valved arsenic crack...

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Bibliographic Details
Main Author: Lui, Poh Yong.
Other Authors: Yoon, Soon Fatt
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Online Access:http://hdl.handle.net/10356/4823
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Institution: Nanyang Technological University
Description
Summary:This thesis presents the solid source molecular beam epitaxy (SSMBE) growth of Gao.52Ino.48P epitaxial layers, Gao.52Ino.48P/Ino.2Gao.8As/GaAs p-HEMT structures, and Gao 52lno.48P/GaAs single quantum well (SQW) on GaAs (100) substrate using the valved phosphorus cracker cell and valved arsenic cracker cell at various growth conditions. A study on defect properties, interface quality, and optical characterizations of the Gao.52Ino.48P/GaAs material system is included.

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