Electrical and optical characterization of GaInP based heterostructures

This thesis presents the solid source molecular beam epitaxy (SSMBE) growth of Gao.52Ino.48P epitaxial layers, Gao.52Ino.48P/Ino.2Gao.8As/GaAs p-HEMT structures, and Gao 52lno.48P/GaAs single quantum well (SQW) on GaAs (100) substrate using the valved phosphorus cracker cell and valved arsenic crack...

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Bibliographic Details
Main Author:	Lui, Poh Yong.
Other Authors:	Yoon, Soon Fatt
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Online Access:	http://hdl.handle.net/10356/4823
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Institution:	Nanyang Technological University

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spelling	sg-ntu-dr.10356-48232023-07-04T15:57:09Z Electrical and optical characterization of GaInP based heterostructures Lui, Poh Yong. Yoon, Soon Fatt School of Electrical and Electronic Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits This thesis presents the solid source molecular beam epitaxy (SSMBE) growth of Gao.52Ino.48P epitaxial layers, Gao.52Ino.48P/Ino.2Gao.8As/GaAs p-HEMT structures, and Gao 52lno.48P/GaAs single quantum well (SQW) on GaAs (100) substrate using the valved phosphorus cracker cell and valved arsenic cracker cell at various growth conditions. A study on defect properties, interface quality, and optical characterizations of the Gao.52Ino.48P/GaAs material system is included. Master of Engineering 2008-09-17T09:59:24Z 2008-09-17T09:59:24Z 2000 2000 Thesis http://hdl.handle.net/10356/4823 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
spellingShingle	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits Lui, Poh Yong. Electrical and optical characterization of GaInP based heterostructures
description	This thesis presents the solid source molecular beam epitaxy (SSMBE) growth of Gao.52Ino.48P epitaxial layers, Gao.52Ino.48P/Ino.2Gao.8As/GaAs p-HEMT structures, and Gao 52lno.48P/GaAs single quantum well (SQW) on GaAs (100) substrate using the valved phosphorus cracker cell and valved arsenic cracker cell at various growth conditions. A study on defect properties, interface quality, and optical characterizations of the Gao.52Ino.48P/GaAs material system is included.
author2	Yoon, Soon Fatt
author_facet	Yoon, Soon Fatt Lui, Poh Yong.
format	Theses and Dissertations
author	Lui, Poh Yong.
author_sort	Lui, Poh Yong.
title	Electrical and optical characterization of GaInP based heterostructures
title_short	Electrical and optical characterization of GaInP based heterostructures
title_full	Electrical and optical characterization of GaInP based heterostructures
title_fullStr	Electrical and optical characterization of GaInP based heterostructures
title_full_unstemmed	Electrical and optical characterization of GaInP based heterostructures
title_sort	electrical and optical characterization of gainp based heterostructures
publishDate	2008
url	http://hdl.handle.net/10356/4823
_version_	1772825755070234624

Electrical and optical characterization of GaInP based heterostructures

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