Electrical and optical characterization of GaInP based heterostructures
This thesis presents the solid source molecular beam epitaxy (SSMBE) growth of Gao.52Ino.48P epitaxial layers, Gao.52Ino.48P/Ino.2Gao.8As/GaAs p-HEMT structures, and Gao 52lno.48P/GaAs single quantum well (SQW) on GaAs (100) substrate using the valved phosphorus cracker cell and valved arsenic crack...
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Format: | Theses and Dissertations |
Published: |
2008
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Online Access: | http://hdl.handle.net/10356/4823 |
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Institution: | Nanyang Technological University |
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