Electrical and optical characterization of GaInP based heterostructures

This thesis presents the solid source molecular beam epitaxy (SSMBE) growth of Gao.52Ino.48P epitaxial layers, Gao.52Ino.48P/Ino.2Gao.8As/GaAs p-HEMT structures, and Gao 52lno.48P/GaAs single quantum well (SQW) on GaAs (100) substrate using the valved phosphorus cracker cell and valved arsenic crack...

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Bibliographic Details
Main Author: Lui, Poh Yong.
Other Authors: Yoon, Soon Fatt
Format: Theses and Dissertations
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/4823
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Institution: Nanyang Technological University
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