Resistive switching in metal-oxide-metal structures for non-volatile memory application
Underlying mechanism of metal-oxide-metal resistive switching device has been of long research interest. Several models have been proposed based different types of materials used. Recent studies showed that oxygen vacancies present at Schottky junction type metal oxide (especially Strontium Titanate...
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| 格式: | Final Year Project |
| 語言: | English |
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2012
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| 在線閱讀: | http://hdl.handle.net/10356/48481 |
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