High frequency, higher power conversion through PWM switching using the third generation IGBTs

• 主要作者: Neo, Tiong Guan.
• 其他作者: Ali Iftekhar Maswood
• 格式: Theses and Dissertations
• 出版: 2008
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Power electronics
• 在線閱讀: http://hdl.handle.net/10356/4938

The use of insulated gate bipolar transistor (IGBT) switch in power electronic application and power conversion process is now predominant. It combines the benefits that are obtainable from both the bipolar junction transistor (BJT) and metal-oxide-semiconductor field-effect transistor (MOSFET). The...