Development of a flip-chip composite interconnection system

The objective of this research is to develop a novel flip-chip composite interconnect structure to overcome the inherent weaknesses of the conventional solder bump interconnection. In the conventional flip-chip, 3-D stacking of chips is often not feasible due to the inherent solder bump collapse dur...

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Main Author: Wong, Stephen Chee Khuen
Other Authors: Pang Hock Lye, John
Format: Theses and Dissertations
Language:English
Published: 2012
Subjects:
Online Access:https://hdl.handle.net/10356/49500
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-495002023-03-11T17:57:24Z Development of a flip-chip composite interconnection system Wong, Stephen Chee Khuen Pang Hock Lye, John School of Mechanical and Aerospace Engineering DRNTU::Engineering::Mechanical engineering::Mechatronics The objective of this research is to develop a novel flip-chip composite interconnect structure to overcome the inherent weaknesses of the conventional solder bump interconnection. In the conventional flip-chip, 3-D stacking of chips is often not feasible due to the inherent solder bump collapse during reflow. The under-bump-metallization (UBM) compatibility with Pb-free solder is a concern, especially with the miniaturization trend. The thin UBM is susceptible to electromigration and metal diffusion. The proposed flip-chip composite structure comprises a Cu pillar with a pinhead on its end which serves as an extended pad for solder bump attachment. The concern of UBM failure on a chip is mitigated as the pinhead which replaces the pad metallization on the chip is extended on a Cu pillar. The chip is no longer exposed to solder reaction during the reflow process. An electrolytic Ni-Au UBM scheme is selected for the Cu pinhead (CPH) pillar bump as the UBM deposition can be carried out in the same plating process for CPH pillars fabrication. Sn-Ag-Cu (SAC) solder and Ni-Au UBM interfacial reaction was investigated. EDX analyses identified a (Ni,Cu)3Sn4 IMC on the Ni UBM interface and a second layer of (Cu,Ni)6Sn5 was formed on top of the (Ni,Cu)3Sn4 IMC. The Ni UBM dissolution after reflow and isothermal aging is approximately 1 µm. A UBM thickness of 2.0 -2.5 µm is recommended for the CPH pillar bump solder attachment. DOCTOR OF PHILOSOPHY (MAE) 2012-05-21T03:57:32Z 2012-05-21T03:57:32Z 2012 2012 Thesis Wong, S. C. K. (2012). Development of a flip-chip composite interconnection system. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/49500 10.32657/10356/49500 en 229 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Mechanical engineering::Mechatronics
spellingShingle DRNTU::Engineering::Mechanical engineering::Mechatronics
Wong, Stephen Chee Khuen
Development of a flip-chip composite interconnection system
description The objective of this research is to develop a novel flip-chip composite interconnect structure to overcome the inherent weaknesses of the conventional solder bump interconnection. In the conventional flip-chip, 3-D stacking of chips is often not feasible due to the inherent solder bump collapse during reflow. The under-bump-metallization (UBM) compatibility with Pb-free solder is a concern, especially with the miniaturization trend. The thin UBM is susceptible to electromigration and metal diffusion. The proposed flip-chip composite structure comprises a Cu pillar with a pinhead on its end which serves as an extended pad for solder bump attachment. The concern of UBM failure on a chip is mitigated as the pinhead which replaces the pad metallization on the chip is extended on a Cu pillar. The chip is no longer exposed to solder reaction during the reflow process. An electrolytic Ni-Au UBM scheme is selected for the Cu pinhead (CPH) pillar bump as the UBM deposition can be carried out in the same plating process for CPH pillars fabrication. Sn-Ag-Cu (SAC) solder and Ni-Au UBM interfacial reaction was investigated. EDX analyses identified a (Ni,Cu)3Sn4 IMC on the Ni UBM interface and a second layer of (Cu,Ni)6Sn5 was formed on top of the (Ni,Cu)3Sn4 IMC. The Ni UBM dissolution after reflow and isothermal aging is approximately 1 µm. A UBM thickness of 2.0 -2.5 µm is recommended for the CPH pillar bump solder attachment.
author2 Pang Hock Lye, John
author_facet Pang Hock Lye, John
Wong, Stephen Chee Khuen
format Theses and Dissertations
author Wong, Stephen Chee Khuen
author_sort Wong, Stephen Chee Khuen
title Development of a flip-chip composite interconnection system
title_short Development of a flip-chip composite interconnection system
title_full Development of a flip-chip composite interconnection system
title_fullStr Development of a flip-chip composite interconnection system
title_full_unstemmed Development of a flip-chip composite interconnection system
title_sort development of a flip-chip composite interconnection system
publishDate 2012
url https://hdl.handle.net/10356/49500
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