Power MOSFET yield improvement through the improvement and refinement of epitaxy process

The work involved in this project is yield improvement of Power MOSFET (PMOS) wafers manufactured in STMicroelectronics. The yield improvement was achieved through the improvement and refinement of Epitaxy process.

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Main Author: Ng, Kin Meng.
Other Authors: Prasad, Krishnamachar
Format: Theses and Dissertations
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/4954
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-49542023-07-04T15:44:11Z Power MOSFET yield improvement through the improvement and refinement of epitaxy process Ng, Kin Meng. Prasad, Krishnamachar School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics The work involved in this project is yield improvement of Power MOSFET (PMOS) wafers manufactured in STMicroelectronics. The yield improvement was achieved through the improvement and refinement of Epitaxy process. Master of Science (Microelectronics) 2008-09-17T10:02:08Z 2008-09-17T10:02:08Z 2003 2003 Thesis http://hdl.handle.net/10356/4954 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Ng, Kin Meng.
Power MOSFET yield improvement through the improvement and refinement of epitaxy process
description The work involved in this project is yield improvement of Power MOSFET (PMOS) wafers manufactured in STMicroelectronics. The yield improvement was achieved through the improvement and refinement of Epitaxy process.
author2 Prasad, Krishnamachar
author_facet Prasad, Krishnamachar
Ng, Kin Meng.
format Theses and Dissertations
author Ng, Kin Meng.
author_sort Ng, Kin Meng.
title Power MOSFET yield improvement through the improvement and refinement of epitaxy process
title_short Power MOSFET yield improvement through the improvement and refinement of epitaxy process
title_full Power MOSFET yield improvement through the improvement and refinement of epitaxy process
title_fullStr Power MOSFET yield improvement through the improvement and refinement of epitaxy process
title_full_unstemmed Power MOSFET yield improvement through the improvement and refinement of epitaxy process
title_sort power mosfet yield improvement through the improvement and refinement of epitaxy process
publishDate 2008
url http://hdl.handle.net/10356/4954
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