Study of degradation mechanism of metal nanocrystal-based gate stacks
This thesis focuses on the degradation and reliability mechanism of the metal nanocrystal-based Al2O3/SiO2 gate stacks which is believed to be a promising candidate for next generation nonvolatile memory. A series of novel approaches were used to obtain in-depth knowledge of the gate stack in terms...
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| 格式: | Theses and Dissertations |
| 語言: | English |
| 出版: |
2012
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/49981 |
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| 機構: | Nanyang Technological University |
| 語言: | English |
| 總結: | This thesis focuses on the degradation and reliability mechanism of the metal nanocrystal-based Al2O3/SiO2 gate stacks which is believed to be a promising candidate for next generation nonvolatile memory. A series of novel approaches were used to obtain in-depth knowledge of the gate stack in terms of charge retention, gate dielectric breakdown and post-breakdown recovery. We also discuss the phenomenon of the post-breakdown recovery on the metal nanocrystal-based gate stack and the possibility of such charge-trapping gate stack as a candidate for a resistive switching memory cell. |
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