Design of process variation-tolerant circuits

• 主要作者: Ho, Kim Ming.
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Final Year Project
• 語言: English
• 出版: 2012
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Electric power
• 在線閱讀: http://hdl.handle.net/10356/50088

This report emphasises on the 6T Static Random Access Memory (SRAM). It describes the basic theory of the SRAM, the concepts of measuring degradation in digital circuits as well as effects of wordline modulation to mitigate the impact of the combined effect of Negative Bias Temperature Instability (...