Design of process variation-tolerant circuits

• Main Author: Ho, Kim Ming.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Final Year Project
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electric power
• Online Access: http://hdl.handle.net/10356/50088
• Institution: Nanyang Technological University

This report emphasises on the 6T Static Random Access Memory (SRAM). It describes the basic theory of the SRAM, the concepts of measuring degradation in digital circuits as well as effects of wordline modulation to mitigate the impact of the combined effect of Negative Bias Temperature Instability (...