Methodology for assessing the reliability of GaN high-electron-mobility transistors

• Main Author: Gunawan, Anton.
• Other Authors: Ng Geok Ing
• Format: Final Year Project
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/50182
• Institution: Nanyang Technological University

The main motivation for this report is to study the degradation mechanisms which reduce the reliability of GaN HEMTs which in turn limit the performance of the devices in the long run and to establish a failure analysis methodology for GaN HEMTs to understand better the degradation mechanisms in the...