Effects of mechanical stress on the performance of metal-oxide-semiconductor transistors

Stress engineering is widely used in the microelectronics industry to improve the on-current (Ion) performance of the metal-oxide-semiconductor (MOS) transistors through the strain-induced mobility enhancement. However, there are still debates regarding the relevance of the low-field mobility in the...

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Main Author: Yang, Peizhen
Other Authors: Chen Tupei
Format: Theses and Dissertations
Language:English
Published: 2012
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Online Access:https://hdl.handle.net/10356/50306
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-503062023-07-04T16:14:10Z Effects of mechanical stress on the performance of metal-oxide-semiconductor transistors Yang, Peizhen Chen Tupei School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Stress engineering is widely used in the microelectronics industry to improve the on-current (Ion) performance of the metal-oxide-semiconductor (MOS) transistors through the strain-induced mobility enhancement. However, there are still debates regarding the relevance of the low-field mobility in the saturation drain current of the nanoscale MOS transistors. Based on velocity saturation model, the high-field velocity is independent of the low-field mobility. In the other words, velocity saturation model predicts that mobility enhancement techniques will not improve Ion of the nanoscale MOS transistors. Ballistic transport model considers an ideal situation where the channel carriers do not experience any scattering when they transit from the source to the drain. Since mobility is a concept that involves channel scattering, ballistic transport regards mobility as irrelevant in the nanoscale MOS transistors. In quasi-ballistic transport model, channel carriers will undergo a number of channel scatterings before reaching the drain. Hence, quasi-ballistic transport model is able to account for the strain-induced Ion improvement in nanoscale MOS transistors. However, the saturation drain current equation of a transistor in the quasi-ballistic model comprises parameters that are not properly defined. Furthermore, some researchers managed to use velocity saturation model to fit the saturation current of the nanoscale MOS transistor. By improvising Lundstrom’s 1997 theory on the quasiballistic transport and unifying the merits of existing transport models, we arrive at a simplified saturation drain current equation for nanoscale MOS transistors. DOCTOR OF PHILOSOPHY (EEE) 2012-05-31T08:12:15Z 2012-05-31T08:12:15Z 2012 2012 Thesis Yang, P. (2012). Effects of mechanical stress on the performance of metal-oxide-semiconductor transistors. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/50306 10.32657/10356/50306 en 166 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Yang, Peizhen
Effects of mechanical stress on the performance of metal-oxide-semiconductor transistors
description Stress engineering is widely used in the microelectronics industry to improve the on-current (Ion) performance of the metal-oxide-semiconductor (MOS) transistors through the strain-induced mobility enhancement. However, there are still debates regarding the relevance of the low-field mobility in the saturation drain current of the nanoscale MOS transistors. Based on velocity saturation model, the high-field velocity is independent of the low-field mobility. In the other words, velocity saturation model predicts that mobility enhancement techniques will not improve Ion of the nanoscale MOS transistors. Ballistic transport model considers an ideal situation where the channel carriers do not experience any scattering when they transit from the source to the drain. Since mobility is a concept that involves channel scattering, ballistic transport regards mobility as irrelevant in the nanoscale MOS transistors. In quasi-ballistic transport model, channel carriers will undergo a number of channel scatterings before reaching the drain. Hence, quasi-ballistic transport model is able to account for the strain-induced Ion improvement in nanoscale MOS transistors. However, the saturation drain current equation of a transistor in the quasi-ballistic model comprises parameters that are not properly defined. Furthermore, some researchers managed to use velocity saturation model to fit the saturation current of the nanoscale MOS transistor. By improvising Lundstrom’s 1997 theory on the quasiballistic transport and unifying the merits of existing transport models, we arrive at a simplified saturation drain current equation for nanoscale MOS transistors.
author2 Chen Tupei
author_facet Chen Tupei
Yang, Peizhen
format Theses and Dissertations
author Yang, Peizhen
author_sort Yang, Peizhen
title Effects of mechanical stress on the performance of metal-oxide-semiconductor transistors
title_short Effects of mechanical stress on the performance of metal-oxide-semiconductor transistors
title_full Effects of mechanical stress on the performance of metal-oxide-semiconductor transistors
title_fullStr Effects of mechanical stress on the performance of metal-oxide-semiconductor transistors
title_full_unstemmed Effects of mechanical stress on the performance of metal-oxide-semiconductor transistors
title_sort effects of mechanical stress on the performance of metal-oxide-semiconductor transistors
publishDate 2012
url https://hdl.handle.net/10356/50306
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