Effects of mechanical stress on the performance of metal-oxide-semiconductor transistors
Stress engineering is widely used in the microelectronics industry to improve the on-current (Ion) performance of the metal-oxide-semiconductor (MOS) transistors through the strain-induced mobility enhancement. However, there are still debates regarding the relevance of the low-field mobility in the...
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| 格式: | Theses and Dissertations |
| 語言: | English |
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2012
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| 在線閱讀: | https://hdl.handle.net/10356/50306 |
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| 機構: | Nanyang Technological University |
| 語言: | English |