Effects of mechanical stress on the performance of metal-oxide-semiconductor transistors

• Main Author: Yang, Peizhen
• Other Authors: Chen Tupei
• Format: Theses and Dissertations
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: https://hdl.handle.net/10356/50306
• Institution: Nanyang Technological University

Stress engineering is widely used in the microelectronics industry to improve the on-current (Ion) performance of the metal-oxide-semiconductor (MOS) transistors through the strain-induced mobility enhancement. However, there are still debates regarding the relevance of the low-field mobility in the...