Design, simulation and fabrication of silicon nanowire based nanoelectronics devices

Silicon nanowire (SiNW) has drawn great research attention in recent years due to its high aspect ratio and unique electrical properties, which arise from quantum confinement effects and changes in the wave function of charge carriers, density of states, effective mass and bandgap. It has the potent...

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Main Author: Sun, Yongshun
Other Authors: Rusli
Format: Theses and Dissertations
Language:English
Published: 2012
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Online Access:https://hdl.handle.net/10356/50627
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-506272023-07-04T16:20:37Z Design, simulation and fabrication of silicon nanowire based nanoelectronics devices Sun, Yongshun Rusli School of Electrical and Electronic Engineering Microelectronics Centre DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Silicon nanowire (SiNW) has drawn great research attention in recent years due to its high aspect ratio and unique electrical properties, which arise from quantum confinement effects and changes in the wave function of charge carriers, density of states, effective mass and bandgap. It has the potential to become the building block of next generation electronics devices. SiNW fabricated using the top-down approach is advantageous compared to the bottom-up approach as the process is compatible with silicon CMOS process and can be integrated with conventional silicon devices. It also allows large scale integration and hence is attractive from the prospective of manufacturability. The objective of this work is to design, simulate, fabricate and characterize SiNW based nanoelectronics devices synthesized with the CMOS compatible top-down approach, where silicon fins are patterned with optical lithography and subsequently oxidized and reduced to form SiNWs. Three SiNW based devices have been investigated in this work, which are Schottky barrier diode, single-electron transistor and p-i-n junctions array. DOCTOR OF PHILOSOPHY (EEE) 2012-08-07T09:07:52Z 2012-08-07T09:07:52Z 2012 2012 Thesis Sun, Y. (2012). Design, simulation and fabrication of silicon nanowire based nanoelectronics devices. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/50627 10.32657/10356/50627 en 159 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Sun, Yongshun
Design, simulation and fabrication of silicon nanowire based nanoelectronics devices
description Silicon nanowire (SiNW) has drawn great research attention in recent years due to its high aspect ratio and unique electrical properties, which arise from quantum confinement effects and changes in the wave function of charge carriers, density of states, effective mass and bandgap. It has the potential to become the building block of next generation electronics devices. SiNW fabricated using the top-down approach is advantageous compared to the bottom-up approach as the process is compatible with silicon CMOS process and can be integrated with conventional silicon devices. It also allows large scale integration and hence is attractive from the prospective of manufacturability. The objective of this work is to design, simulate, fabricate and characterize SiNW based nanoelectronics devices synthesized with the CMOS compatible top-down approach, where silicon fins are patterned with optical lithography and subsequently oxidized and reduced to form SiNWs. Three SiNW based devices have been investigated in this work, which are Schottky barrier diode, single-electron transistor and p-i-n junctions array.
author2 Rusli
author_facet Rusli
Sun, Yongshun
format Theses and Dissertations
author Sun, Yongshun
author_sort Sun, Yongshun
title Design, simulation and fabrication of silicon nanowire based nanoelectronics devices
title_short Design, simulation and fabrication of silicon nanowire based nanoelectronics devices
title_full Design, simulation and fabrication of silicon nanowire based nanoelectronics devices
title_fullStr Design, simulation and fabrication of silicon nanowire based nanoelectronics devices
title_full_unstemmed Design, simulation and fabrication of silicon nanowire based nanoelectronics devices
title_sort design, simulation and fabrication of silicon nanowire based nanoelectronics devices
publishDate 2012
url https://hdl.handle.net/10356/50627
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