Design, simulation and fabrication of silicon nanowire based nanoelectronics devices
Silicon nanowire (SiNW) has drawn great research attention in recent years due to its high aspect ratio and unique electrical properties, which arise from quantum confinement effects and changes in the wave function of charge carriers, density of states, effective mass and bandgap. It has the potent...
Saved in:
Main Author: | Sun, Yongshun |
---|---|
Other Authors: | Rusli |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2012
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/50627 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Fabrication of large-area silicon nanowires arrays for solar cell application
by: Leow, Yan Xiang.
Published: (2010) -
Through-silicon via fabrication with pulse-reverse electroplating for high density nanoelectronics
by: Lin, Nay, et al.
Published: (2013) -
Si nanowire based NVM : SONOS fabrication & characterization
by: Chen, Mincong.
Published: (2009) -
Electrical characterization of Si Nanowire based devices – transistors and SONOS memory
by: Xiong, Tian Zhong.
Published: (2010) -
AlN nanowires : synthesis, physical properties, and nanoelectronics applications
by: Kenry, et al.
Published: (2013)