Structural and electrical characterization of GaN based hetero-structures

• المؤلف الرئيسي: Agarwal, Ananya
• مؤلفون آخرون: K Radhakrishnan
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/53109

The thesis discusses about the structural and electrical properties of GaN based materials. The literature review covers basic concepts of GaN materials and high electron mobility transistors (HEMTs). In particular, detailed explanation on the polarization charges that are present in AlGaN/GaN HEMT...