Study of chemical vapor deposited carbon nanotubes as electrical interconnect
This report aims to optimize the thickness of the Titanium/ Titanium Nitride (Ti/TiN) and Aluminum/Aluminum Oxide (Al/Al2O3) thin films in order to achieve a suitable compromise between the growth of the carbon nanotube as well as high conductivity. Experiments are conducted with various thicknesses...
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| Format: | Final Year Project |
| Language: | English |
| Published: |
2013
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| Online Access: | http://hdl.handle.net/10356/53535 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | This report aims to optimize the thickness of the Titanium/ Titanium Nitride (Ti/TiN) and Aluminum/Aluminum Oxide (Al/Al2O3) thin films in order to achieve a suitable compromise between the growth of the carbon nanotube as well as high conductivity. Experiments are conducted with various thicknesses of Ti/TiN and Al/Al2O3 thin films in order to find a best fit solution that allows considerable growth of carbon nanotubes while as the same time minimizing the resistivity of the barrier layers. Last but not least, a comparison study is done to find out the differences in properties of the carbon nanotubes grown on the two thin films. |
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