Study of chemical vapor deposited carbon nanotubes as electrical interconnect

This report aims to optimize the thickness of the Titanium/ Titanium Nitride (Ti/TiN) and Aluminum/Aluminum Oxide (Al/Al2O3) thin films in order to achieve a suitable compromise between the growth of the carbon nanotube as well as high conductivity. Experiments are conducted with various thicknesses...

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Main Author:	Ng, Chou Shing
Other Authors:	Tay Beng Kang
Format:	Final Year Project
Language:	English
Published:	2013
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Online Access:	http://hdl.handle.net/10356/53535
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-53535
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spelling	sg-ntu-dr.10356-535352023-07-07T16:03:59Z Study of chemical vapor deposited carbon nanotubes as electrical interconnect Ng, Chou Shing Tay Beng Kang School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics This report aims to optimize the thickness of the Titanium/ Titanium Nitride (Ti/TiN) and Aluminum/Aluminum Oxide (Al/Al2O3) thin films in order to achieve a suitable compromise between the growth of the carbon nanotube as well as high conductivity. Experiments are conducted with various thicknesses of Ti/TiN and Al/Al2O3 thin films in order to find a best fit solution that allows considerable growth of carbon nanotubes while as the same time minimizing the resistivity of the barrier layers. Last but not least, a comparison study is done to find out the differences in properties of the carbon nanotubes grown on the two thin films. Bachelor of Engineering 2013-06-05T01:27:41Z 2013-06-05T01:27:41Z 2013 2013 Final Year Project (FYP) http://hdl.handle.net/10356/53535 en Nanyang Technological University 74 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Ng, Chou Shing Study of chemical vapor deposited carbon nanotubes as electrical interconnect
description	This report aims to optimize the thickness of the Titanium/ Titanium Nitride (Ti/TiN) and Aluminum/Aluminum Oxide (Al/Al2O3) thin films in order to achieve a suitable compromise between the growth of the carbon nanotube as well as high conductivity. Experiments are conducted with various thicknesses of Ti/TiN and Al/Al2O3 thin films in order to find a best fit solution that allows considerable growth of carbon nanotubes while as the same time minimizing the resistivity of the barrier layers. Last but not least, a comparison study is done to find out the differences in properties of the carbon nanotubes grown on the two thin films.
author2	Tay Beng Kang
author_facet	Tay Beng Kang Ng, Chou Shing
format	Final Year Project
author	Ng, Chou Shing
author_sort	Ng, Chou Shing
title	Study of chemical vapor deposited carbon nanotubes as electrical interconnect
title_short	Study of chemical vapor deposited carbon nanotubes as electrical interconnect
title_full	Study of chemical vapor deposited carbon nanotubes as electrical interconnect
title_fullStr	Study of chemical vapor deposited carbon nanotubes as electrical interconnect
title_full_unstemmed	Study of chemical vapor deposited carbon nanotubes as electrical interconnect
title_sort	study of chemical vapor deposited carbon nanotubes as electrical interconnect
publishDate	2013
url	http://hdl.handle.net/10356/53535
_version_	1772828974628470784

Study of chemical vapor deposited carbon nanotubes as electrical interconnect

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