A new method to form Au particle on silicon wafer

This project provides a research on a Reactive Ion Etch (RIE) based new method of synthesizing Au catalyst on the silicon substrate for semiconductor nanowires growths. The critical step in synthesizing semiconductor nanowires by VLS growth is the controlled preparation of the Au catalyst size on va...

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Main Author: Yi, Qin.
Other Authors: Tang Xiaohong
Format: Final Year Project
Language:English
Published: 2013
Subjects:
Online Access:http://hdl.handle.net/10356/54206
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-542062023-07-07T17:18:17Z A new method to form Au particle on silicon wafer Yi, Qin. Tang Xiaohong School of Electrical and Electronic Engineering DRNTU::Engineering This project provides a research on a Reactive Ion Etch (RIE) based new method of synthesizing Au catalyst on the silicon substrate for semiconductor nanowires growths. The critical step in synthesizing semiconductor nanowires by VLS growth is the controlled preparation of the Au catalyst size on various substrates, which will determinate the diameter of nanowires. In this work, the reactive ion etching of gold films as thick as 600nm has been investigated. The etch chemistry utilized consists of a mixture of dichlorodifluoromethane (CCl2F2), tetrafluoromethane (CF4), and oxygen (O2). However, we need understand the relationship between Au particle size and RIE etch rate and etch rates were studied for various gas compositions, chamber pressures and power using a parallel plate reactive ion etcher. The etch process developed uses an eight inch oxidized silicon wafer, which serves as the substrate platter. The presence of this relatively large area of silicon dioxide during the etch process serves to prevent the accumulation of etching residues and polymer films atop the gold surface, which tend to inhibit the gold etch. A CCl2F2-based etch chemistry offers an advantage over other chlorine-based etches in that a standard fluorine reactive ion etching (RIE) system may be used. This eliminates the need for a more corrosive chlorine RIE system, reducing system complexity and avoiding the hazards of handling dangerous chlorine gases. Bachelor of Engineering 2013-06-14T08:31:33Z 2013-06-14T08:31:33Z 2013 2013 Final Year Project (FYP) http://hdl.handle.net/10356/54206 en Nanyang Technological University 51 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering
spellingShingle DRNTU::Engineering
Yi, Qin.
A new method to form Au particle on silicon wafer
description This project provides a research on a Reactive Ion Etch (RIE) based new method of synthesizing Au catalyst on the silicon substrate for semiconductor nanowires growths. The critical step in synthesizing semiconductor nanowires by VLS growth is the controlled preparation of the Au catalyst size on various substrates, which will determinate the diameter of nanowires. In this work, the reactive ion etching of gold films as thick as 600nm has been investigated. The etch chemistry utilized consists of a mixture of dichlorodifluoromethane (CCl2F2), tetrafluoromethane (CF4), and oxygen (O2). However, we need understand the relationship between Au particle size and RIE etch rate and etch rates were studied for various gas compositions, chamber pressures and power using a parallel plate reactive ion etcher. The etch process developed uses an eight inch oxidized silicon wafer, which serves as the substrate platter. The presence of this relatively large area of silicon dioxide during the etch process serves to prevent the accumulation of etching residues and polymer films atop the gold surface, which tend to inhibit the gold etch. A CCl2F2-based etch chemistry offers an advantage over other chlorine-based etches in that a standard fluorine reactive ion etching (RIE) system may be used. This eliminates the need for a more corrosive chlorine RIE system, reducing system complexity and avoiding the hazards of handling dangerous chlorine gases.
author2 Tang Xiaohong
author_facet Tang Xiaohong
Yi, Qin.
format Final Year Project
author Yi, Qin.
author_sort Yi, Qin.
title A new method to form Au particle on silicon wafer
title_short A new method to form Au particle on silicon wafer
title_full A new method to form Au particle on silicon wafer
title_fullStr A new method to form Au particle on silicon wafer
title_full_unstemmed A new method to form Au particle on silicon wafer
title_sort new method to form au particle on silicon wafer
publishDate 2013
url http://hdl.handle.net/10356/54206
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