Characterization of GaN-based HEMT structures for high power applications

• 主要作者: Pang, Shi Xiang.
• 其他作者: K Radhakrishnan
• 格式: Final Year Project
• 語言: English
• 出版: 2013
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• 在線閱讀: http://hdl.handle.net/10356/54247
• 機構: Nanyang Technological University

GaN based HEMT devices on 4 inch Si (111) were characterized to study their electrical parameters, using Hall Effect, Current-Voltage and Capacitance-Voltage measurements. Four different types of structure configurations were studied, which include different stress mitigating layers with carbon dopi...