Advanced CMOS technologies (high-k/metal gate stacks) for sub-22nm node
A thermally grown silicon dioxide (SiO2), which forms the insulating layer in the metal-oxide-semiconductor field effect transistor (MOSFET), is considered as the heart of a MOSFET. It has been essential for the microelectronics revolution due to the following outstanding properties: high resistivit...
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| 格式: | Theses and Dissertations |
| 語言: | English |
| 出版: |
2013
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/54848 |
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