Nonvolatile resistive switching in metal oxides for the application in resistive random access memory

• المؤلف الرئيسي: Peng, Haiyang
• مؤلفون آخرون: Wu Tao, Tom
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2014
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/55364
• المؤسسة: Nanyang Technological University

Resistive random access memory (ReRAM or memristor) based on the resistive switching (RS) has been proposed as a potential candidate for next generation nonvolatile memory with high density, fast write and erase access, low power operation, and excellent retention performance. Although most of the t...