Development of UV photodetector structures on silicon

AlxGa1-xN based UV photodetectors on Si samples grown by RF-MBE technique were characterized to study the effects of varying Al % composition on the optical and structural properties of the samples. Photoluminescence (PL), X-Ray Diffraction (XRD), Microscope and Scanning Electron Microscope (SEM) we...

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Main Author: Muhammad Osman
Other Authors: K. Radhakrishnan
Format: Final Year Project
Language:English
Published: 2014
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Online Access:http://hdl.handle.net/10356/60882
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-608822023-07-07T16:39:31Z Development of UV photodetector structures on silicon Muhammad Osman K. Radhakrishnan School of Electrical and Electronic Engineering Temasek Laboratories @ NTU DRNTU::Engineering::Electrical and electronic engineering AlxGa1-xN based UV photodetectors on Si samples grown by RF-MBE technique were characterized to study the effects of varying Al % composition on the optical and structural properties of the samples. Photoluminescence (PL), X-Ray Diffraction (XRD), Microscope and Scanning Electron Microscope (SEM) were used to characterize the samples. In addition to that, I – V and Hall Measurement were also done to study the electrical properties of these samples. From the PL data, the Al % composition was determined and it was found that there was an increase in the band gap energy when the Al % composition was increased. A general trend could also be observed for FWHM and TDD against varying Al % composition. However, no obvious trend could be seen on the effects of different Al % composition on the RMS roughness, sheet resistivity and leakage current against Al % composition. After taking into consideration other factors like the Al and Ga flux, it can be seen that the RMS roughness and leakage current increased with increasing Al flux with Ga flux fixed at a constant value. However, the sheet resistivity seemed to decrease with increasing Al flux. Bachelor of Engineering 2014-06-02T07:06:32Z 2014-06-02T07:06:32Z 2014 2014 Final Year Project (FYP) http://hdl.handle.net/10356/60882 en Nanyang Technological University 63 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Muhammad Osman
Development of UV photodetector structures on silicon
description AlxGa1-xN based UV photodetectors on Si samples grown by RF-MBE technique were characterized to study the effects of varying Al % composition on the optical and structural properties of the samples. Photoluminescence (PL), X-Ray Diffraction (XRD), Microscope and Scanning Electron Microscope (SEM) were used to characterize the samples. In addition to that, I – V and Hall Measurement were also done to study the electrical properties of these samples. From the PL data, the Al % composition was determined and it was found that there was an increase in the band gap energy when the Al % composition was increased. A general trend could also be observed for FWHM and TDD against varying Al % composition. However, no obvious trend could be seen on the effects of different Al % composition on the RMS roughness, sheet resistivity and leakage current against Al % composition. After taking into consideration other factors like the Al and Ga flux, it can be seen that the RMS roughness and leakage current increased with increasing Al flux with Ga flux fixed at a constant value. However, the sheet resistivity seemed to decrease with increasing Al flux.
author2 K. Radhakrishnan
author_facet K. Radhakrishnan
Muhammad Osman
format Final Year Project
author Muhammad Osman
author_sort Muhammad Osman
title Development of UV photodetector structures on silicon
title_short Development of UV photodetector structures on silicon
title_full Development of UV photodetector structures on silicon
title_fullStr Development of UV photodetector structures on silicon
title_full_unstemmed Development of UV photodetector structures on silicon
title_sort development of uv photodetector structures on silicon
publishDate 2014
url http://hdl.handle.net/10356/60882
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