Development of UV photodetector structures on silicon

• Main Author: Muhammad Osman
• Other Authors: K. Radhakrishnan
• Format: Final Year Project
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: http://hdl.handle.net/10356/60882
• Institution: Nanyang Technological University

AlxGa1-xN based UV photodetectors on Si samples grown by RF-MBE technique were characterized to study the effects of varying Al % composition on the optical and structural properties of the samples. Photoluminescence (PL), X-Ray Diffraction (XRD), Microscope and Scanning Electron Microscope (SEM) we...