Development of UV photodetector structures on silicon

AlxGa1-xN based UV photodetectors on Si samples grown by RF-MBE technique were characterized to study the effects of varying Al % composition on the optical and structural properties of the samples. Photoluminescence (PL), X-Ray Diffraction (XRD), Microscope and Scanning Electron Microscope (SEM) we...

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書目詳細資料
主要作者: Muhammad Osman
其他作者: K. Radhakrishnan
格式: Final Year Project
語言:English
出版: 2014
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在線閱讀:http://hdl.handle.net/10356/60882
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