Development of UV photodetector structures on silicon
AlxGa1-xN based UV photodetectors on Si samples grown by RF-MBE technique were characterized to study the effects of varying Al % composition on the optical and structural properties of the samples. Photoluminescence (PL), X-Ray Diffraction (XRD), Microscope and Scanning Electron Microscope (SEM) we...
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| Format: | Final Year Project |
| Language: | English |
| Published: |
2014
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| Online Access: | http://hdl.handle.net/10356/60882 |
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| Institution: | Nanyang Technological University |
| Language: | English |