Design and growth of high-power gallium nitride light-emitting diodes
In this dissertation, the InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) have been studied from multiple aspects including improvement of material quality, suppression of quantum confined Stark effect (QCSE), promotion of carrier transport, enhancement of current spreading, reduc...
Saved in:
Main Author: | Zhang, Zihui |
---|---|
Other Authors: | Hilmi Volkan Demir |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2014
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/61870 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
High power gallium nitride light-emitting diodes for efficient solid state lighting and displays
by: Ji, Yun
Published: (2014) -
Optimizing electro-luminescence processes in organic light-emitting diodes
by: Divayana, Yoga
Published: (2008) -
Organic light emitting diode
by: Koh, Wei Chong.
Published: (2012) -
Growth and fabrication of low thermal-mass gallium nitride light-emitting diodes
by: Lu, Shunpeng
Published: (2017) -
Colloidal quantum dot light-emitting diode architectures for high performance
by: Leck, Kheng Swee
Published: (2016)