Characterization of GaN-semiconductor device structures for high power and high frequency applications
Applications in electronic and integrated circuits are mainly supported by the Si-based semiconductor. However, Si-based semiconductor have limitations in its properties that makes it difficult to be used in high-frequency and high-power systems. This caused the rise of GaN as an alternative which p...
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| Format: | Final Year Project |
| Language: | English |
| Published: |
2015
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| Online Access: | http://hdl.handle.net/10356/62099 |
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| Institution: | Nanyang Technological University |
| Language: | English |