Characterization of GaN-semiconductor device structures for high power and high frequency applications

• Main Author: Marimuthu Tamilmaran
• Other Authors: K Radhakrishnan
• Format: Final Year Project
• Language: English
• Published: 2015
• Subjects: DRNTU::Engineering
• Online Access: http://hdl.handle.net/10356/62099
• Institution: Nanyang Technological University

Applications in electronic and integrated circuits are mainly supported by the Si-based semiconductor. However, Si-based semiconductor have limitations in its properties that makes it difficult to be used in high-frequency and high-power systems. This caused the rise of GaN as an alternative which p...