Characterization of GaN-semiconductor device structures for high power and high frequency applications

• المؤلف الرئيسي: Marimuthu Tamilmaran
• مؤلفون آخرون: K Radhakrishnan
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2015
• الموضوعات: DRNTU::Engineering
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/62099

Applications in electronic and integrated circuits are mainly supported by the Si-based semiconductor. However, Si-based semiconductor have limitations in its properties that makes it difficult to be used in high-frequency and high-power systems. This caused the rise of GaN as an alternative which p...