High-κ/metal gate for advanced transistor applications

• المؤلف الرئيسي: Duan, Tianli
• مؤلفون آخرون: Ang Diing Shenp
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2015
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/62510

Advanced HfO2 high-κ materials have been developed to replace SiO2 as the gate dielectrics. The Electronic structures consisting of various HfO2/SiO2/Si-substrate gate stacks have been characterized. The hafnium silicate formed at the HfO2/SiO2 interface is found to play a key role in generating an...