High-κ/metal gate for advanced transistor applications
Advanced HfO2 high-κ materials have been developed to replace SiO2 as the gate dielectrics. The Electronic structures consisting of various HfO2/SiO2/Si-substrate gate stacks have been characterized. The hafnium silicate formed at the HfO2/SiO2 interface is found to play a key role in generating an...
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| 格式: | Theses and Dissertations |
| 語言: | English |
| 出版: |
2015
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| 在線閱讀: | https://hdl.handle.net/10356/62510 |
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