High frequency noise modeling in low inversion region
The design of the low-voltage low-power RF circuit has become increasingly grown in demand. The existence of noise in MOSFET is one of the main challenges of the low-voltage low-power RFIC design. The performance of RF circuits strongly relies on upon how accurate the high frequency noise characteri...
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| 格式: | Theses and Dissertations |
| 語言: | English |
| 出版: |
2015
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| 主題: | |
| 在線閱讀: | http://hdl.handle.net/10356/63796 |
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