All MOS low-power low-voltage LDO with an embedded voltage reference
A low dropout (LDO) voltage regulator with embedded voltage reference (EVR) where all MOSFETs are biased in weak inversion (sub-threshold region) except the pass transistor, generating a mean regulated voltage of 620.3 mV at full load (10 mA) under 1.2-V supply voltage, has been designed and simulat...
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| Format: | Final Year Project |
| Language: | English |
| Published: |
2015
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| Online Access: | http://hdl.handle.net/10356/64618 |
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| Institution: | Nanyang Technological University |
| Language: | English |